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    四英寸/六英寸單晶石墨烯晶圓 4’/6’ Single-Crystal Graphene Wafer

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    2.0晶圓.jpg

    2.0晶圓.jpg


    通過"磁控濺射+固相外延重結晶"的技術制備銅單晶晶圓,進而在銅單晶襯底上外延生長得到單晶石墨烯晶圓。利用界面結合力與熱應力工程消除了石墨烯的褶皺與臺階束,使其粗糙度(RMS)降低至1nm以下。相較于普通CVD石墨烯薄膜,單晶石墨烯晶圓具有更高的平整度,媲美機械剝離石墨烯的超強機械性能以及超高的均一性,是石墨烯應用于高性能電子及光電子器件集成的理想材料。

    The single crystal copper wafer was prepared by the technology of "magnetron sputtering + solid phase epitaxial  recrystallization", and then the single crystal graphene wafer was produced by epitaxial growth on the single  crystal copper substrate. We eliminate the wrinkles and step bundles of graphene via interface bonding force and  thermal stress engineering, which decrease its roughness (RMS) to less than 1nm. Compared with ordinary CVD  graphene films, single crystal graphene wafers have higher flatness, better mechanical properties and ultra-high  uniformity. Graphene is used in high-performance electronic and optoelectronic devices. Single-crystal graphene  wafers are ideal materials for the integration of high performance electronic and op

    地址:北京市海淀區蘇家坨鎮翠湖南環路13號院中關村翠湖科技園2號樓

    郵編:100095 電話:010-83432600

    北京石墨烯研究院 版權所有 京ICP備17046994號-1

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